Service Features
- UV irradiation: Reproduction of defect expansion leading to current-carrying deterioration by intense UV laser irradiation
- High-definition PL images: reliably capture BPD, SSF, and other defects
- Analysis and interpretation based on extensive knowledge and experience
We provides contract measurement services for SiC wafers and chips. Please use our measurement service to support research activities at your company or laboratory.
Service Details
Features of UV Irradiation Service
Example of Defect Extensions
Irradiation conditions
UV irradiation strength：Max 150W/㎠
Beam Dia.：Max φ3mm
Frequency：355nm
※No clean room support.
Reproduces defect expansion leading to current-carrying deterioration by powerful UV laser irradiation. Defect expansion leading to current-carrying degradation can be confirmed at the wafer stage. This eliminates the device fabrication process and contributes to shortening the development cycle.
Defect enlargement by UV irradiation
It has been reported that the ON resistance of 4H-SiC MOSFETs increases with repeated ON-OFF cycles associated with device use.
This phenomenon is explained by the BPD in the drift layer acting as a recombination point for carriers and the SSF expanding due to the recombination energy released. dislocation glide).
SSF expansion can also be observed by irradiating UV light without current and generating carriers in the drift layer.
Features of PL Observation Service
Example of PL Observation
Typical observation conditions
Sample : 4H-SiC epitaxial wafer
Excitation wavelength : 313 nm
PL Observation wavelength : Over 700 nm
PL observation : 2.66mm square per field of view, resolution: 2.6μm/pixel
Deliverables : Image data (raw data x number of fields of view, overall image)
※No clean room support.
The above samples were obtained in collaboration with Prof. Masafumi Kato, Nagoya Institute of Technology
(Subsidized by JST A-step JPMJTM19CP)
BPD Defect detection data
We will provide defect location data of base plane dislocation (BPD) detected from the requested PL observation image free of charge.
- Defect location data of BPD (CSV format)
- Defect map image with BPD locations plotted
- Defect positions are marked and displayed when PL observation images are displayed.
PL observation of BPD in buffer layer
It is now possible to detect BPD in the buffer layer, which could not be detected by conventional PL observation.
Until now, it has not been possible to observe BPD in buffer layers because they are non-luminescent. With the new observation method, band edge emission is observed and the non-emissive dark line is taken as the BPD of the buffer layer.
If you select 380 nm as the observation wavelength, we can provide BPD observation of the buffer layer here.
Observation conditions
Observation wavelength
The observation wavelength can be selected according to the type of defect to be captured.
Observation Field
There are two sizes to choose from.
Wavelength
Subject Defects
720 nm over
BPD, triangular defect, micro-pipe
420 nm
Stacking defects (single Shockley type)
500 nm
Stacking defects (double Shockley type)
380 nm
BPD (drift layer, buffer layer), stacking faults
Objective lens
Field of view
Pixel resolution
x5
2.66 mm square
2.6 μm / pixel
x10
1.3 mm square
1.3 μm / pixel
*The details of the observation will be decided at a meeting in advance.
Applicable size
We will propose the optimum observation conditions for your various needs, such as the object to be observed, defects to be found, and the purpose of observation. Please feel free to contact us.
Wafer
Applicable size: Up to 8-inch wafers
*Specification of some areas and arbitrary size pieces are also available. Please contact us for details.
Module
We open the package, take out the chip, remove the electrode, and observe it so that PL observation is possible.
Order Flow
1.Consultation
After selecting the irradiation and observation conditions, we will determine the details of the observation at a meeting (web interview, telephone call, etc.).
2. Quotation and Order
We will issue a quotation based on the details decided at the meeting.
Our quotation includes an [Order Form] field. Please fill in the required information and return it to us by e-mail or fax.
Of course, you can also issue an order form in your company’s format.
3. Delivery of samples
After ordering, please send the measurement sample to the following address.
1-60 Kuribayashi-cho, Otsu-shi, Shiga 520-2151, Japan
ITES Corporation Product Development Department
4. Measurement
Delivery time will vary depending on the content of the measurement and the operational status of the equipment.
Basically, deliverables are only measurement data.
If a report is required, a separate fee will be charged.