Click on the button to download the documents.
Contents
Sequential UV Mapping of Stacking-Fault Expansion for Wafer-Level Assessment of Bipolar-Degradation Susceptibility in 4H-SiC
On the Critical Threshold for the Expansion of a Single Shockley-Type Stacking Fault in n-Type 4H-SiC
Contrasting Effects of Stopped and Through-Wafer Proton Implantation on Shockley Stacking-Fault Expansion in 4H-SiC